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SI2300-TP PDF预览

SI2300-TP

更新时间: 2024-11-15 19:30:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 655K
描述
Small Signal Field-Effect Transistor,

SI2300-TP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.65峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SI2300-TP 数据手册

 浏览型号SI2300-TP的Datasheet PDF文件第2页浏览型号SI2300-TP的Datasheet PDF文件第3页浏览型号SI2300-TP的Datasheet PDF文件第4页 
M C C  
R
Micro Commercial Components  
Micro Commercial Components  
130 W Cochran St, Unit B  
Simi Valley, CA 93065  
Tel:818-701-4933  
SI2300  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
N-Channel  
Enhancement Mode  
20V,4.5A, RDS(ON)<25m=@VGS=4.5V  
RDS(ON)<35m=@VGS=2.5V  
High dense cell design for extremely low RDS(ON)  
Rugged and reliable  
Field Effect Transistor  
Lead free product is acquired  
SOT-23 Package  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
SOT-23  
A
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
D
3
1.GATE  
Symbol  
VDS  
ID  
VGS  
Parameter  
Drain-source Voltage  
Drain Current-Continuous  
Rating  
20  
4.5  
±10  
1
125  
Unit  
V
A
2. SOURCE  
B
C
3. DRAIN  
Gate-source Voltage  
V
1
2
PD  
Total Power Dissipation  
W
R/W  
R
Thermal Resistance Junction to Ambientb  
F
E
R
TJ  
E
JA  
Operating Junction Temperature  
Storage Temperature  
-55 to +150  
-55 to +150  
TSTG  
R
H
G
J
K
DIMENSIONS  
MM  
INCHES  
MIN  
.110  
DIM  
A
B
MAX  
.120  
.104  
MIN  
2.80  
2.10  
MAX  
3.04  
2.64  
NOTE  
Internal Block Diagram  
.083  
C
D
E
F
G
H
J
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
1.20  
.89  
1.78  
.45  
.013  
.89  
.085  
.37  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
D
K
Suggested Solder  
Pad Layout  
.031  
.800  
G
.035  
.900  
S
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 4  
2017/04/29  
Revision: A  

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