Datasheet > SI2301

SI2301

更新时间： 2024-11-16 18:10:07

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	338K
描述
SOT-23

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中文翻译

获取价格

数据手册

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SI2301 数据手册

SI2301

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 R^DS(ON)≤ 85 mΩ@V^GS=-4.5V,I^D=-3.0A

R^DS(ON)≤115mΩ@V^GS=-2.5V,I^D=-1.0A

 Low on-resistance

 For low power DC to DC converter and load switch applications

 Surface mount device

SOT-23

MECHANICAL DATA

 Case: SOT-23

 Case material: Molded plastic. UL flammability

 Classification rating: 94V-0

 Terminal: Tin plated, solderable per

MIL-STD-750,method 2026

 Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T^A=25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-source voltage

Gate-source voltage

V^DS

V^GS

- 20

± 8

T^C=25°C

T^C=70°C

- 3.0

- 2.5

Continuous drain current

(T_J=150°C)

I^D

T^A=25°C (note 2,3)

T^A=70°C (note 2,3)

- 2.3

- 1.8

Pulsed drain current

I^DM

I^S

- 10

T^C=25°C

- 1.3

Continuous source-drain diode

current

T^A=25°C (note 2,3)

T^C=25°C

- 0.72

1.6

T^C=70°C

1.0

0.86

Maximum power dissipation

P^D

T^A=25°C (note 2,3)

T^A=70°C (note 2,3)

0.55

Operating junction and storage temperature range

Thermal resistance,junction-to-ambient@ t≤5s

T^J, T^stg

R^thJA

-55 ~ +150

Typ.:120 Max.:145

°C

°C/W

Thermal resistance,junction-to-foot, (Drain)@ Steady state

R^thJF

Typ.:62

Max.:78

Note:

1. Based on TC = 25 °C.

2. Surface Mounted on 1" x 1" FR4 board.

3. t = 5s.

4. Maximum under Steady State conditions is 175°C/W.

1/6

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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