SI2301DS

更新时间： 2024-11-01 22:21:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	56K
描述
P-Channel 1.25-W, 2.5-V MOSFET

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SI2301DS 数据手册

Si2301DS

Vishay Siliconix

P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.130 @ V = -4.5 V

-2.3

-1.9

-20

0.190 @ V = -2.5 V

TO-236

(SOT-23)

Ordering Information: Si2301DS-T1

Top View

Si2301DS (A1)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

T = 25_C

-2.3

Continuous Drain Current (T = 150_C)

T = 70_C

-1.5

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

-1.6

T = 25_C

1.25

Power Dissipation

T = 70_C

0.8

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

100

166

thJA

C/W

Maximum Junction-to-Ambient

Notes

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 Board, t v 5 sec.

c. Surface Mounted on FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70627

S-31990—Rev. E, 13-Oct-03

www.vishay.com

12 3 4

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