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SI2301BDS_08 PDF预览

SI2301BDS_08

更新时间: 2024-11-15 06:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 94K
描述
P-Channel 2.5-V (G-S) MOSFET

SI2301BDS_08 数据手册

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Si2301BDS  
Vishay Siliconix  
P-Channel 2.5-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
I
D (A)b  
- 2.4  
VDS (V)  
RDS(on) (Ω)  
Pb-free  
0.100 at VGS = - 4.5 V  
0.150 at VGS = - 2.5 V  
Available  
- 20  
RoHS*  
- 2.0  
COMPLIANT  
TO-236  
(SOT-23)  
G
S
1
3
D
2
Top View  
Si2301 BDS (L1)*  
* Marking Code  
Ordering Information: Si2301BDS-T1  
Si2301BDS-T1-E3 (Lead (Pb)-free)  
Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
8
V
VGS  
TA = 25 °C  
A = 70 °C  
- 2.4  
- 1.9  
- 2.2  
- 1.8  
Continuous Drain Current (TJ = 150 °C)b  
ID  
T
A
Pulsed Drain Currenta  
Continuous Source Current (Diode Conduction)b  
IDM  
IS  
- 10  
- 0.72  
0.9  
- 0.6  
0.7  
TA = 25 °C  
TA = 70 °C  
Power Dissipationb  
PD  
W
0.57  
0.45  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
120  
Maximum  
145  
Unit  
Maximum Junction-to-Ambientb  
Maximum Junction-to-Ambientc  
RthJA  
°C/W  
140  
175  
Notes:  
a. Pulse width limited by maximum junction temperature.  
b. Surface Mounted on FR4 board, t 5 s.  
c. Surface Mounted on FR4 board.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 72066  
S-80427-Rev. D, 03-Mar-08  
www.vishay.com  
1

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