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SI2301CDS-T1-GE3 PDF预览

SI2301CDS-T1-GE3

更新时间: 2024-11-02 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 103K
描述
P-Channel 20-V (D-S) MOSFET

SI2301CDS-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:0.79Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:184089
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236)
Samacsys Released Date:2015-04-13 16:58:49Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):3.1 A最大漏极电流 (ID):3.1 A
最大漏源导通电阻:0.112 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.6 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI2301CDS-T1-GE3 数据手册

 浏览型号SI2301CDS-T1-GE3的Datasheet PDF文件第2页浏览型号SI2301CDS-T1-GE3的Datasheet PDF文件第3页浏览型号SI2301CDS-T1-GE3的Datasheet PDF文件第4页浏览型号SI2301CDS-T1-GE3的Datasheet PDF文件第5页浏览型号SI2301CDS-T1-GE3的Datasheet PDF文件第6页 
Si2301CDS  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
MOSFET PRODUCT SUMMARY  
Halogen-free Option Available  
I
D (A)a  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
TrenchFET® Power MOSFET  
0.112 at VGS = - 4.5 V  
0.142 at VGS = - 2.5 V  
- 3.1  
RoHS  
- 20  
3.3 nC  
COMPLIANT  
APPLICATIONS  
- 2.7  
Load Switch  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2301CDS (N1)*  
* Marking Code  
Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free)  
Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
8
V
VGS  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
- 3.1  
- 2.5  
- 2.3b, c  
- 1.8b, c  
- 10  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
- 1.3  
- 0.72b, c  
1.6  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
C = 25 °C  
T
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
1.0  
PD  
Maximum Power Dissipation  
W
0.86b, c  
0.55b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
- 55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
Typical  
120  
Maximum  
Unit  
5 s  
Steady State  
145  
78  
°C/W  
RthJF  
62  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 175 °C/W.  
Document Number: 68741  
S-81446-Rev. A, 23-Jun-08  
www.vishay.com  
1

SI2301CDS-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI2301CDS-T1-E3 VISHAY

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