Datasheet > SI2301AHE3

SI2301AHE3

更新时间： 2024-11-16 14:54:47

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	1048K
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SI2301AHE3 数据手册

SI2301AHE3

Features

• High Dense Cell Design For Extremely Low R_DS(ON)

• AEC-Q101 Qualified

• Rugged and reliable

• High Speed Switching

P-Channel MOSFET

• Epoxy Meets UL 94 V-0 Flammability Rating

• Moisture Sensitivity Level 1

• Halogen Free. “Green” Device ^{(Note 1)}

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55^oC to +150^oC

Storage Temperature Range: -55^oC to +150^oC

Maximum Thermal Resistance: 125^oC/W Junction to Ambient^(Note

SOT-23

Parameter

Rating

Unit

Symbol

V_DS

Drain -source Voltage

Gate -Source Voltage

-20V

V_GS

±10

-3.4

-2.7

-14

T_A=25°C

I_D

Drain Current-Continuous

T_A=70°C

Drain Current-Pulse^{(Note 2)}

I_DM

Power Dissipation

P_D

1.0

Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

DIMENSIONS

2.Surface Mounted on FR4 Board t<5sec.

INCHES

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

Internal Structure and Marking Code

0.01 0.10

0.0004 0.004

0.035 0.041 0.90 1.025

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

1. *$7E

2. 6285&(

3. '5$,1

S1.

0.020

0.50

0.007

0.20

Suggested Solder Pad Layout

0.031

0.800

0.035

0.900

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.3-1-03302022

1/4

MCCSEMI.COM

12 3 4

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与SI2301AHE3相关器件

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