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SI2301CDS PDF预览

SI2301CDS

更新时间: 2024-11-02 06:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 103K
描述
P-Channel 20-V (D-S) MOSFET

SI2301CDS 数据手册

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Si2301CDS  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
MOSFET PRODUCT SUMMARY  
Halogen-free Option Available  
I
D (A)a  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
TrenchFET® Power MOSFET  
0.112 at VGS = - 4.5 V  
0.142 at VGS = - 2.5 V  
- 3.1  
RoHS  
- 20  
3.3 nC  
COMPLIANT  
APPLICATIONS  
- 2.7  
Load Switch  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2301CDS (N1)*  
* Marking Code  
Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free)  
Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
8
V
VGS  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
- 3.1  
- 2.5  
- 2.3b, c  
- 1.8b, c  
- 10  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
- 1.3  
- 0.72b, c  
1.6  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
C = 25 °C  
T
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
1.0  
PD  
Maximum Power Dissipation  
W
0.86b, c  
0.55b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
- 55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
Typical  
120  
Maximum  
Unit  
5 s  
Steady State  
145  
78  
°C/W  
RthJF  
62  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 175 °C/W.  
Document Number: 68741  
S-81446-Rev. A, 23-Jun-08  
www.vishay.com  
1

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