SHD218414
SHD218414A
SHD218414B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 780, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
•
•
•
1000 Volt, 3.0 Ohm, 3A MOSFET
Electrically Isolated, Hermetically Sealed
Electrically Equivalent to MTC3N100E
MAXIMUM RATINGS
ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
SYMBOL
MIN.
-
-
TYP.
-
-
MAX.
±20
3.0
UNITS
Volts
Amps
VGS
ID
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25°C
VGS=10V, TC = 100°C
2.4
IDM
TOP/TSTG
RθJC
-
-55
-
-
-
-
-
9.0
+150
0.89
140
Amps
PULSED DRAIN CURRENT
@ TC = 25°C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25°C
°C
°C/W
Watts
PD
-
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
1000
-
-
Volts
VGS = 0V, ID = 250μA
DRAIN TO SOURCE ON STATE RESISTANCE
-
Ω
VGS = 10V, ID = 1.5A
VDS = VGS, ID = 250μA
RDS(ON)
3.0
4.0
VGS(th)
gfs
2.0
2.0
-
4.0
-
Volts
GATE THRESHOLD VOLTAGE
FORWARD TRANSCONDUCTANCE
3.56
S(1/Ω)
VDS = 15V, ID = 1.5A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0V
DS = Max. Rating
GS = 0V, TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = -20V
-
-
μA
IDSS
10
100
V
V
IGSS
-
-
-
-100
100
-
nA
nC
GATE TO SOURCE LEAKAGE REVERSE
V
GS = 20V
TOTAL GATE CHARGE
VGS = 10V
Qg
Qgs
Qgd
td(on)
tr
32.5
6.0
14.6
13
19
42
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
TURN ON DELAY TIME
RISE TIME
V
DS = Max. Ratingx0.5
ID = 3.0A
VDD = 400V,
ID = 3.0A,
-
25
40
90
55
nsec
td(off)
tf
TURN OFF DELAY TIME
FALL TIME
RG = 9.1Ω
VGS = 10V
33
VSD
-
-
-
1.1
Volts
nsec
DIODE FORWARD VOLTAGE
TJ = 25°C, IS = 3.0A,
VGS = 0V
TJ = 125°C
TJ = 25°C,
IS = 3.0A,
trr
615
-
DIODE REVERSE RECOVERY TIME
REVERSE RECOVERY CHARGE
diS/dt = -100A/μsec
Qrr
2.92
μC
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
VGS = 0 V,
VDS = 25 V,
f = 1.0MHz
Ciss
Coss
Crss
-
1316
117
26
1800
260
75
pF
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