SHD218513
SHD218513A
SHD218513B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 747, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
•
•
•
•
•
600 Volt, 0.60 Ohm, 11A MOSFET
Isolated Hermetic Metal Package
Fast Switching
Low RDS (on)
Electrically Equivalent to IRFPC50
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
VGS
ID
IDM
TJ/TSTG
PD
MIN.
-
-
-
-55
-
TYP.
MAX.
±20
11
UNITS
Volts
Amps
Amps
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
-
-
-
-
-
-
44
@ TC = 25°C
OPERATING AND STORAGE TEMPERATURE
+150
430
0.29
°C
Watts
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
@ TC = 25°C
-
RθJC
°C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
600
-
-
Volts
VGS = 0V, ID = 1.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 6.0A
RDS(ON)
VGS(th)
-
-
-
0.60
4.0
Ω
Volts
2.0
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250μA
FORWARD TRANSCONDUCTANCE
S(1/Ω)
VDS = 100V,
DS = 6.0A
gfs
5.7
-
-
-
-
I
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. rating, VGS = 0V
IDSS
100
500
μA
TJ = 25°C
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V
IDSS
IGSS
-
-
-
-
-
μA
TJ = 125°C
VGS = 20V
GATE TO SOURCE LEAKAGE FORWARD
GATE TO SOURCE LEAKAGE REVERSE
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
100
-100
-
nA
V
GS = -20V
VDD = 300V,
ID = 11A,
RG = 6.2Ω
td(ON)
18
37
88
36
tr
td(OFF)
tf
nsec
Volts
nsec
pF
VSD
-
-
-
1.4
DIODE FORWARD VOLTAGE
TC = 25°C, IS = 11A,
GS = 0V
V
trr
550
830
REVERSE RECOVERY TIME
TJ = 25°C,
IF = 11A,
di/dt = 100A/μsec
VGS = 0 V
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
Ciss
Coss
Crss
-
2700
300
61
-
VDS = 25 V
f = 1.0MHz
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