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SHD218508B PDF预览

SHD218508B

更新时间: 2024-12-02 09:26:39
品牌 Logo 应用领域
SENSITRON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
3页 54K
描述
HERMETIC POWER MOSFET N-CHANNEL

SHD218508B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CHIP CARRIER, R-XBCC-N3
针数:3Reach Compliance Code:compliant
风险等级:5.79外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):5.6 A最大漏极电流 (ID):5.6 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XBCC-N3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W最大脉冲漏极电流 (IDM):22 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SHD218508B 数据手册

 浏览型号SHD218508B的Datasheet PDF文件第2页浏览型号SHD218508B的Datasheet PDF文件第3页 
SHD218508  
SHD218508A  
SHD218508B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 2023, REV. -  
Formerly Part Number SHD2188/A/B  
HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
·
·
·
·
·
1000 Volt, 2.0 Ohm, 5.6A MOSFET  
Hermetic Ceramic Package  
Fast Switching  
Low RDS (on)  
Similar to Part Type IRFAG50  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
GATE TO SOURCE VOLTAGE  
SYMBOL  
MIN.  
-
TYP.  
-
MAX.  
±20  
5.6  
3.5  
22  
+150  
0.6  
200  
UNITS  
Volts  
VGS  
ON-STATE DRAIN CURRENT  
ON-STATE DRAIN CURRENT TC = 100°C  
PULSED DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
THERMAL RESISTANCE, JUNCTION TO CASE  
TOTAL DEVICE DISSIPATION  
ID  
ID  
IDM  
TJ/TSTG  
RthJC  
PD  
-
-
-
-
-
-
-
-
Amps  
Amps  
Amps  
-
-55  
-
°C  
°C/W  
Watts  
-
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNITS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
1000  
-
-
Volts  
VGS = 0V, ID = 1.0mA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
VGS = 10V, ID = 3.5A  
-
-
2.0  
RDS(ON)  
VGS(th)  
gfs  
W
Volts  
S(1/W)  
GATE THRESHOLD VOLTAGE  
VDS = VGS, ID = 250mA  
2.0  
5.2  
-
-
4.0  
-
FORWARD TRANSCONDUCTANCE  
VDS ³ 15V, IDS = 3.5A  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C  
IDSS  
IGSS  
-
-
25  
250  
mA  
TJ = 125°C  
VGS = 20V  
VGS = -20V  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
-
-
-
-
100  
-100  
30  
44  
210  
nA  
TURN ON DELAY TIME  
RISE TIME  
VDD = 400V,  
ID = 5.6A,  
td(ON)  
tr  
td(OFF)  
tf  
nsec  
TURN OFF DELAY TIME  
FALL TIME  
RG = 2.35W  
60  
DIODE FORWARD VOLTAGE  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
REVERSE RECOVERY TIME  
IS = 5.6A, VGS = 0V  
VSD  
-
-
-
1.8  
Volts  
nsec  
TJ = 25°C,  
IF = 5.6A, VDD £ 50V,  
di/dt = 100A/msec  
VGS = 0 V  
trr  
-
-
1200  
-
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
Ciss  
Coss  
Crss  
2400  
240  
80  
VDS = 25 V  
f = 1.0MHz  
pF  
·221 WEST INDUSTRY COURT · DEER PARK, NY 11729-4681 · PHONE (631) 586-7600 · FAX (631) 242-9798·  
· World Wide Web Site - www.sensitron.com · E-Mail Address - sales@sensitron.com ·  

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