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SHD218505 PDF预览

SHD218505

更新时间: 2024-12-03 09:26:39
品牌 Logo 应用领域
SENSITRON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
2页 37K
描述
HERMETIC POWER MOSFET N-CHANNEL

SHD218505 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-XXSO-N3
针数:3Reach Compliance Code:compliant
风险等级:5.79外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.415 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XXSO-N3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SHD218505 数据手册

 浏览型号SHD218505的Datasheet PDF文件第2页 
SENSITRON  
SEMICONDUCTOR  
SHD218505  
TECHNICAL DATA  
DATA SHEET 1012, REV -  
Formerly Part Number SHD2185/A/B  
HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
500 Volt, 0.3 Ohm, 9.0A MOSFET  
Low RDS (on)  
Equivalent to IRF450 Series  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
SYMBOL  
VGS  
ID  
IDM  
TOP/TSTG  
MIN.  
-
-
-
-55  
-
TYP.  
MAX.  
±20  
12  
48  
+150  
0.6  
UNITS  
Volts  
Amps  
GATE TO SOURCE VOLTAGE  
CONTINUOUS DRAIN CURRENT  
PULSED DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
TERMAL RESISTANCE JUNCTION TO CASE  
TOTAL DEVICE DISSIPATION @ TC = 25°C  
-
-
-
-
-
-
@ TC = 25°C  
@ TC = 25°C  
Amps(pk)  
°C  
°C/W  
Watts  
RθJC  
PD  
-
200  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNITS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
500  
-
-
Volts  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
DRAIN TO SOURCE ON STATE RESISTANCE  
VGS(th)  
RDS(on)  
2.0  
-
-
-
4.0  
GATE THRESHOLD VOLTAGE  
VGS = 10Vdc, ID = 8.0A  
-
-
0.415  
Ω
PULSE TEST, t 300 μs, DUTY CYCLE d 2%  
ZERO GATE VOLTAGE DRAIN CURRENT  
IDSS  
25  
VDS = 0.8xMax. Rating, TJ = 25°C  
μA  
250  
mA  
nA  
V
GS = 0Vdc, TJ = 125°C  
VGS = ±20Vdc,  
DS = 0  
VGS = 10 Vdc  
IGSS  
-
-
-
GATE TO BODY LEAKAGE CURRENT  
±100  
V
TOTAL GATE CHARGE  
Qg  
Qgs  
Qgd  
td(ON)  
tr  
td(OFF)  
tf  
VSD  
55  
5.0  
27  
-
120  
19  
70  
nC  
GATE TO SOURCE CHARGE  
GATE TO DRAIN CHARGE  
TURN ON DELAY TIME  
RISE TIME  
TURN OFF DELAY TIME  
FALL TIME  
V
DS = 0.5VxMax. Rating,  
ID = 12A  
VDD = 250V,  
ID = 12,  
RG = 2.35Ω  
-
35  
nsec  
190  
170  
130  
1.7  
FORWARD VOLTAGE  
IS = 12A, VGS = 0V  
-
-
-
Volts  
nsec  
PULSE TEST, t 300 μs, DUTY CYCLE d 2%  
REVERSE RECOVERY TIME  
IF = 12A  
di/dt = 100A/μsec  
VDD 50V  
trr  
1600  
14  
-
-
REVERSE RECOVERY CHARGE  
QRR  
μC  
pF  
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
VDS = 25 Vdc,  
VGS = 0 Vdc,  
f = 1 MHz  
Ciss  
Coss  
Crss  
CDC  
-
2700  
600  
240  
12  
REVERSE TRANSFER CAPACITANCE  
DRAIN TO CASE CAPACITANCE  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com •  

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