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SHD218507 PDF预览

SHD218507

更新时间: 2024-12-02 09:26:39
品牌 Logo 应用领域
SENSITRON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 52K
描述
HERMETIC POWER MOSFET N-CHANNEL

SHD218507 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-XXSO-N3
针数:3Reach Compliance Code:compliant
风险等级:5.79外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):6.7 A最大漏极电流 (ID):6.7 A
最大漏源导通电阻:1.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XXSO-N3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W最大脉冲漏极电流 (IDM):27 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SHD218507 数据手册

 浏览型号SHD218507的Datasheet PDF文件第2页浏览型号SHD218507的Datasheet PDF文件第3页浏览型号SHD218507的Datasheet PDF文件第4页 
SHD218507  
SHD218507A  
SHD218507B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4064, REV. -  
Formerly part number SHD2187  
HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
·
·
·
·
900 Volt, 1.6-Ohm, 6.7A MOSFET  
Hermetic Package  
Fast Switching  
Low RDS (on)  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
SYMBOL  
VGS  
ID  
IDM  
TJ/TSTG  
PD  
MIN.  
-
-
-
-55  
-
TYP.  
MAX.  
±20  
6.7  
27  
+150  
160  
UNITS  
Volts  
Amps  
Amps  
°C  
GATE TO SOURCE VOLTAGE  
ON-STATE DRAIN CURRENT  
PULSED DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
TOTAL DEVICE DISSIPATION  
-
-
-
-
-
Watts  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNITS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
1000  
-
-
Volts  
VGS = 0V, ID = 250  
mA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
-
-
1.6  
VGS = 10V, ID =  
RDS(ON)  
W
4.0A  
GATE THRESHOLD VOLTAGE  
FORWARD TRANSCONDUCTANCE  
VDS = VGS, ID = 250 mA  
VGS(th)  
gfs  
2.0  
4.9  
-
-
4.5  
-
Volts  
S(1/W)  
VDS = 100V, ID =  
4.0A  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C  
IDSS  
-
-
-
100  
500  
mA  
TJ =  
125°C  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
TURN ON DELAY TIME  
RISE TIME  
VGS = 20V  
VGS = -20V  
VDD = 450V  
ID =  
IGSS  
-
-
100  
-100  
-
nA  
td(ON)  
tr  
td(OFF)  
tf  
20 34  
130 37  
nsec  
6.7A  
TURN OFF DELAY TIME  
FALL TIME  
VGS=10V  
RG =  
6.2W  
DIODE FORWARD VOLTAGE  
IS = 6.7A, VGS = 0V  
VSD  
-
-
-
1.8  
Volts  
nsec  
Pulse test, t £ 300 ms, duty cycle d £ 2  
%
REVERSE RECOVERY TIME  
TJ = 25°C,  
IF=6.7A, VDD  
=
trr  
610  
920  
100V  
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· World Wide Web Site - www.sensitron.com · E-Mail Address - sales@sensitron.com ·  

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