SENSITRON
SEMICONDUCTOR
SHD218504
TECHNICAL DATA
DATA SHEET 1011, REV -
Formerly Part Number SHD2184/A/B
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
•
•
•
400 Volt, 0.3 Ohm, 9.0A MOSFET
Low RDS (on)
Equivalent to IRF350 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
SYMBOL
VGS
MIN.
-
-
-
-55
-
TYP.
MAX.
±20
14
UNITS
Volts
Amps
Amps
-
-
-
-
-
-
ID
ID
ON-STATE DRAIN CURRENT
ON-STATE DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
@ TC = 25°C
@ TC = 100°C
9.0
TOP/TSTG
PD
RthJC
+150
200
0.6
°C
Watts
TOTAL DEVICE DISSIPATION @ TC = 25°C
THERMAL RESISTANCE, JUNCTION TO CASE
-
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
400
-
-
Volts
VGS = 0V, ID = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
GS = 10V, ID = 9.0A
GS = 10V, ID = 14A
GATE THRESHOLD VOLTAGE VDS ≥ 15VGS, IDS = 9.0A
FORWARD TRANSCONDUCTANCE
VDS ≥ 15V, IDS = 9.0A
-
-
Ω
V
V
RDS(ON)
0.3
0.4
-
VGS(th)
gfs
6.0
6.0
-
-
Volts
-
S(1/Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
-
-
V
DS = Max. Rating, VGS = 0V
IDSS
IGSS
250
1000
100
-100
35
190
170
130
μA
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD
GATE TO SOURCE LEAKAGE REVERSE
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
VGS = 20V
VGS = -20V
VDD = 200V,
ID = 14A,
-
-
-
-
nA
td(ON)
tr
td(OFF)
tf
nsec
RG = 2.35Ω
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
ID = 14A,
VGS = 10V,
VDS =0.5xMax. Rating
Qg
Qgs
Qgd
VSD
52
5.0
25
-
-
-
-
-
110
18
65
nC
nC
nC
1.7
Volts
DIODE FORWARD VOLTAGE
TC = 25°C, IS = 14A,
VGS = 0V
QRR
trr
-
-
-
-
11
REVERSE RECOVERY CHARGE
TJ = 25°C,
μC
nsec
pF
di/dt ≤ 100A/μsec, VDD ≤ 50V
TJ = 25°C,
1200
REVERSE RECOVERY TIME
IF = 14A,
di/dt ≤ 100A/μsec, VDD ≤ 50V
VGS = 0 V
INPUT CAPACITANCE
Ciss
Coss
Crss
-
2600
680
250
-
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
VDS = 25 V
f = 1.0MHz
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