是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-MSSO-G2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.79 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.027 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-MSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 220 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SHD218501B | SENSITRON |
获取价格 |
NSM | |
SHD218502 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET N-CHANNEL | |
SHD218502A | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Me | |
SHD218502B | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Me | |
SHD218504 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET N-CHANNEL | |
SHD218504A | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta | |
SHD218504B | SENSITRON |
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暂无描述 | |
SHD218505 | SENSITRON |
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HERMETIC POWER MOSFET N-CHANNEL | |
SHD218505A | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Me | |
SHD218505B | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Me |