Datasheet > RN1112ACT(TPL3)

RN1112ACT(TPL3)

更新时间： 2024-09-21 19:49:19

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	163K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SMT

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1112ACT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
最大集电极电流 (IC)：	0.08 A	最小直流电流增益 (hFE)：	120
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.1 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1112ACT(TPL3) 数据手册

RN1112ACT, RN1113ACT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1112ACT, RN1113ACT

Switching Applications

•

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

0.6±0.05

0.5±0.03

３

•

Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

１

２

•

Complementary to RN2112ACT, RN2113ACT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

1.BASE

2.EMITTER

CST3

3.COLLECOTR

JEDEC

JEITA

―

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

TOSHIBA

2-1J1A

Weight:0.75 mg (typ.)

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note1)

100

150

stg

−55 to 150

Note1: Mounted on FR4 board (10 mm × 10 mm × 1 mmt)

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-08

2014-03-01

12 3 4 5 6

中文翻译

下载PDF

与RN1112ACT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1112CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1112F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1112FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1112FT	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transi
RN1112FT(TE85L)	TOSHIBA	获取价格	RN1112FT(TE85L)
RN1112FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1112FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1112MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1L1A, VESM, 3 PIN,
RN1112MFV(TL3,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1112MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

与RN1112ACT(TPL3)相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

34
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

31
SL74HC10N：高性能三输入与非门解析
2024-09-03

104
AIC1781A 电池充电控制器深度解析
2024-09-03

100

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1112ACT(TPL3)

RN1112ACT(TPL3) 技术参数

RN1112ACT(TPL3) 数据手册

与RN1112ACT(TPL3)相关器件

与RN1112ACT(TPL3)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1112ACT(TPL3)

RN1112ACT(TPL3) 技术参数

RN1112ACT(TPL3) 数据手册

与RN1112ACT(TPL3)相关器件

与RN1112ACT(TPL3)相关文章

您还可以找

您在本页遇到什么问题？