是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.78 |
Is Samacsys: | N | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 10 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PDSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1106FS | TOSHIBA |
获取价格 |
TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP General | |
RN1106FS(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 50mA 20volts 3Pin 4.7K x 47Kohms | |
RN1106FT(TE85L) | TOSHIBA |
获取价格 |
RN1106FT(TE85L) | |
RN1106FV | TOSHIBA |
获取价格 |
暂无描述 | |
RN1106FV(TPL3) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
RN1106MFV | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN1106MFV(TL3MAA) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
RN1106MFV(TL3PAV) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
RN1106MFV(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 100mA 50volts 3Pin 4.7K x 47Kohms | |
RN1107 | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |