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RB751SL PDF预览

RB751SL

更新时间: 2024-11-18 03:37:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
4页 230K
描述
Schottky Barrier Diodes

RB751SL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOD-923F
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.69
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.2 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.227 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.008 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RB751SL 数据手册

 浏览型号RB751SL的Datasheet PDF文件第2页浏览型号RB751SL的Datasheet PDF文件第3页浏览型号RB751SL的Datasheet PDF文件第4页 
December 2007  
RB751SL  
Schottky Barrier Diodes  
Features  
Low Forward Voltage Drop  
Fast switching  
Very Small and Thin SMD package  
Profile height, 0.43mm max  
Footprint, 1.0 x 0.6 mm  
Connection Diagram  
1
2
2
1
SOD-923  
Marking: AD  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
A
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
30  
Unit  
V
VRRM  
IF(AV)  
IFSM  
30  
mA  
mA  
Forward Surge Current  
200  
( 8.3mS Single Half Sine-Wave)  
PD  
Power Dissipation  
227  
mW  
TJ, TSTG  
Operating Junction & Storage Temperature Range  
-55 to +150  
°C  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Unit  
RθJA  
* Minimum land pad.  
Thermal Resistance, Junction to Ambient *  
550  
°C/W  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Breakdown Voltage  
Forward Voltage  
Test Conditions  
IR = 10μA  
Min.  
Max.  
Unit  
V
VR  
30  
VF  
IR  
IF = 1mA  
370  
0.5  
8.0  
2.5  
mV  
μA  
Reverse Leakage  
VR = 30V  
trr  
Cj  
Reverse Recovery Time  
Junction Capacitance  
IF = IR= 10mA, irr= 0.1IR  
VR = 1V, f = 1.0MHz  
nS  
pF  
© 2007 Fairchild Semiconductor Corporation  
RB751SL Rev. 1.0.0  
www.fairchildsemi.com  
1

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