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RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-19 17:15:47
品牌 Logo 应用领域
德昌 - TC /
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4页 130K
描述
SOD-323

RB751V-40 数据手册

 浏览型号RB751V-40的Datasheet PDF文件第2页浏览型号RB751V-40的Datasheet PDF文件第3页浏览型号RB751V-40的Datasheet PDF文件第4页 
TAK CHEONG®  
SEMICONDUCTOR  
200mW SOD-323 SURFACE MOUNT  
Very Small Outline Flat Lead Plastic Package  
Schottky Barrier Diode  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
200  
-55 to +125  
+125  
40  
mW  
°C  
°C  
V
Storage Temperature Range  
Operating Junction Temperature  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
VRRM  
VR  
30  
V
IF  
Forward Current  
30  
mA  
Non-Repetitive Peak Forward Current  
(at 8.3ms single half sine-wave)  
IFSM  
200  
mA  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Low Forward Voltage Drop  
Flat Lead SOD-323 Small Outline Plastic Package  
Surface Device Type Mounting  
RoHS Compliant  
DEVICE MARKING CODES:  
Device Type  
RB751V-40  
Device Marking  
B5  
Green EMC  
Matte Tin(Sn) Lead Finish  
Band Indicates Cathode  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
Unit  
Min  
Max  
BV  
IR  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
IR=10µA  
30  
Volts  
µA  
VR=30V  
IF=1mA  
0.5  
VF  
TCBAT42WS,  
0.37  
Volts  
Number: DB-084  
November 2012, Revision D  
Page 1  

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