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RB751SM-40 PDF预览

RB751SM-40

更新时间: 2024-11-18 09:37:51
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
4页 1045K
描述
Schottky Barrier Diode

RB751SM-40 数据手册

 浏览型号RB751SM-40的Datasheet PDF文件第2页浏览型号RB751SM-40的Datasheet PDF文件第3页浏览型号RB751SM-40的Datasheet PDF文件第4页 
Data Sheet  
Schottky Barrier Diode  
RB751SM-40  
lApplications  
lDimensions (Unit : mm)  
lLand size figure (Unit : mm)  
High speed switching  
0.8±0.05  
0.12±0.05  
0.8  
lFeatures  
1)Ultra small mold type. (EMD2)  
2)High reliability  
EMD2  
lConstruction  
0.3±0.05  
Silicon epitaxial  
lStructure  
0.6±0.1  
ROHM : EMD2  
JEDEC :SOD-523  
JEITA : SC-79  
dot (year week factory)  
lTaping specifications (Unit : mm)  
lAbsolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive)  
Reverse voltage (DC)  
40  
30  
V
Average rectified forward current  
Forward current surge peak (60Hz1cyc)  
Junction temperature  
30  
Io  
IFSM  
Tj  
mA  
mA  
°C  
°C  
200  
150  
Storage temperature  
Tstg  
-40 to +150  
lElectrical characteristics (Ta=25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
0.37  
0.5  
-
Unit  
V
Conditions  
VF  
IR  
IF=1mA  
-
-
-
-
-
Reverse current  
VR=30V  
μA  
pF  
VR=1V , f=1MHz  
Capacitance between terminals  
Ct  
2
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.06 - Rev.A  
1/3  

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