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RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-18 06:07:11
品牌 Logo 应用领域
商升特 - SEMTECH 二极管光电二极管局域网
页数 文件大小 规格书
2页 126K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

RB751V-40 数据手册

 浏览型号RB751V-40的Datasheet PDF文件第2页 
RB751V-40  
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE  
PINNING  
Features  
DESCRIPTION  
Cathode  
PIN  
1
• Small surface mounting type  
• Low reverse current and low forward voltage  
• High reliability  
Anode  
2
2
1
S8  
Top View  
Marking Code: "S8"  
Applications  
• High speed switching  
Simplified outline SOD-323 and symbol  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Peak Reverse Voltage  
Reverse Voltage  
VRM  
VR  
IO  
40  
V
V
30  
30  
Mean Rectifying Current  
mA  
mA  
Peak Forward Surge Current (60 Hz for 1 Cyc.)  
Junction Temperature  
IFSM  
Tj  
200  
O
C
125  
O
C
Storage Temperature Range  
Ts  
- 40 to + 125  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Typ.  
Max.  
Unit  
Forward Voltage  
at IF = 1 mA  
VF  
IR  
-
-
0.37  
0.5  
-
V
Reverse Current  
at VR = 30 V  
µA  
pF  
Capacitance Between Terminals  
at VR = 1 V, f = 1 MHz  
CT  
2
Note: ESD sensitive product handling required.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 01/09/2006  

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