Datasheet > RB751V-40_12

RB751V-40_12

更新时间： 2024-11-18 07:17:59

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	95K
描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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RB751V-40_12 数据手册

SMD Schottky Barrier Diodes

RB751V-40

Io = 30 mA

VR = 30 Volts

RoHS Device

SOD-323

Features

0.071(1.80)

0.063(1.60)

-Low current rectifier.

-Low voltage, low inductance.

-For power supply.

0.055(1.40)

0.047(1.20)

0.014(0.35)

0.010(0.25)

Mechanical data

0.106(2.70)

0.098(2.50)

-Case: SOD-323 Standard package,

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750D, method 2026.

0.039(1.00)Max.

0.006(0.15)Max.

-Mounting position: Any.

0.004(0.10)Max.

0.019(0.475)REF

Dimensions in inches and (millimeter)

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

VRRM

Typ

Max Unit

Parameter

Repetitive peak reverse voltage

Conditions

Min

Reverse voltage

Average forward current

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

IFSM

0.2

Storage temperature

Junction temperature

TSTG

-40

+125

°C

Electrical Characteristics (At Ta=25°C, unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Forward voltage

IF = 1 mA

VR = 30 V

0.37

Reverse current

0.5

Junction capacitance

VR = 1V,f=1MHz

REV:A

Page 1

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Comchip Technology CO., LTD.

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