RB751V40T1/D

更新时间： 2024-11-17 23:32:11

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	48K
描述
Schottky Barrier Diode

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RB751V40T1/D 数据手册

RB751V40T1

Schottky Barrier Diode

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

http://onsemi.com

• Extremely Fast Switching Speed

• Extremely Low Forward Voltage – 0.28 Volts (Typ) @ I = 1 mAdc

• Low Reverse Current

40 V SCHOTTKY

BARRIER DIODE

CATHODE

ANODE

MAXIMUM RATINGS

Rating

Peak Reverse Voltage

Symbol Value

Unit

Reverse Voltage

Vdc

Electrostatic Discharge

HBM Class: 1C

MM Class: A

SOD–323

CASE 477

PLASTIC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,

200

(Note 1.) T = 25°C

Derate above 25°C

MARKING DIAGRAMS

5E M

1.57

635

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage

Temperature Range

T , T

–55 to

+150

stg

1. FR–5 Minimum Pad

5E = Specific Device Code

= Date Code

ORDERING INFORMATION

Device

RB751V40T1

Package

Shipping

3000/Tape & Reel

SOD–323

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 1

RB751V40T1/D

12 3 4

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