生命周期: | Active | 包装说明: | R-PDSO-F2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.66 |
Is Samacsys: | N | 其他特性: | LOW POWER LOSS |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PDSO-F2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最大输出电流: | 0.03 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
最大功率耗散: | 0.2 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 40 V | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | MATTE TIN |
端子形式: | FLAT | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RB751V-40RRG | TSC |
获取价格 |
200mW, Low VF SMD Schottky Barrier Diode | |
RB751V-40S2 | CYSTEKEC |
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Small Signal Schottky diode | |
RB751V40T1 | ONSEMI |
获取价格 |
40 V SCHOTTKY BARRIER DIODE | |
RB751V-40-T1 | WTE |
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Rectifier Diode, Schottky, 1 Element, 0.03A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2 | |
RB751V40T1/D | ONSEMI |
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Schottky Barrier Diode | |
RB751V40T1G | ONSEMI |
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Schottky Barrier Diode | |
RB751V-40-T1-LF | WTE |
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Rectifier Diode, Schottky, 1 Element, 0.03A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC | |
RB751V-40TE-17 | ROHM |
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Schottky barrier diode | |
RB751V-40-TP | MCC |
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Rectifier Diode, Schottky, 1 Element, 0.03A, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
RB751V-40WS | TSC |
获取价格 |
200mW, Low VF SMD Schottky Barrier Diode |