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RB751V-40RR PDF预览

RB751V-40RR

更新时间: 2024-01-20 09:34:19
品牌 Logo 应用领域
TSC 二极管光电二极管瞄准线
页数 文件大小 规格书
3页 137K
描述
200mW, Low VF SMD Schottky Barrier Diode

RB751V-40RR 技术参数

生命周期:Active包装说明:R-PDSO-F2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.66
Is Samacsys:N其他特性:LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

RB751V-40RR 数据手册

 浏览型号RB751V-40RR的Datasheet PDF文件第2页浏览型号RB751V-40RR的Datasheet PDF文件第3页 
RB751V-40  
200mW, Low VF SMD Schottky Barrier Diode  
Small Signal Diode  
SOD-323  
Features  
—Low power loss, high current capability, low VF  
—Surface device type mounting  
—Moisture sensitivity level 1  
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Min Max  
0.047 0.055  
Dimensions  
Min  
1.20  
2.50  
0.25  
1.60  
0.80  
0.08  
Max  
Mechanical Data  
—Case : SOD-323 small outline plastic package  
A
B
C
D
E
F
1.40  
2.80 0.098 0.106  
0.35 0.010 0.014  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
—Weight :0.004 gram (approximately)  
—Marking Code : 5  
1.80  
0.90  
0.15  
0.063 0.071  
0.031 0.035  
0.003 0.006  
0.19 REF  
G
0.475 REF  
Pin Configuration  
Ordering Information  
Marking  
Package  
Part No.  
Packing  
Suggested PAD Layout  
5
5
SOD-323 RB751V-40 RR  
3K / 7" Reel  
0.63  
0.025  
SOD-323 RB751V-40 RRG 3K / 7" Reel  
0.83  
0.033  
1.60  
0.063  
2.86  
0.113  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
200  
Units  
mW  
V
Power Dissipation  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
VRRM  
VR  
40  
30  
V
Mean Forward Current @ TL=100°C (Lead Temperature)  
Non-Repetitive Peak Forward Surge Current (Note 1)  
Thermal Resistance (Junction to Ambient) (Note 2)  
Junction and Storage Temperature Range  
IO  
30  
mA  
A
IFSM  
0.2  
RθJA  
TJ, TSTG  
500  
°C/W  
°C  
-45~125  
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)  
Notes:2. Valid provided that electrodes are kept at ambient temperature  
Version : B10  

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