Datasheet > RB751V40-Q

RB751V40-Q

更新时间： 2024-11-19 11:13:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	177K
描述
Schottky barrier diodeProduction

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RB751V40-Q 数据手册

RB751V40-Q

Schottky barrier diode

14 September 2021

Product data sheet

1. General description

Planar Schottky barrier diode with an integrated guard ring for stress protection, in a very small

SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low forward voltage

•

Low capacitance

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Ultra high-speed switching

Voltage clamping

Line termination

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

120

Unit

forward current

V_RRM

repetitive peak reverse

voltage

V_F

forward voltage

I_F= 1 mA; t_p≤ 300 µs; δ ≤ 0.02;

pulsed; T_amb= 25 °C

370

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

SOD323

[1] The marking bar indicates the cathode.

12 3 4 5 6 7 8

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与RB751V40-Q相关器件

型号	品牌	获取价格	描述	数据表
RB751V-40-Q1	ANBON	获取价格	SOD-323
RB751V-40RR	TSC	获取价格	200mW, Low VF SMD Schottky Barrier Diode
RB751V-40RRG	TSC	获取价格	200mW, Low VF SMD Schottky Barrier Diode
RB751V-40S2	CYSTEKEC	获取价格	Small Signal Schottky diode
RB751V40T1	ONSEMI	获取价格	40 V SCHOTTKY BARRIER DIODE
RB751V-40-T1	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 0.03A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2
RB751V40T1/D	ONSEMI	获取价格	Schottky Barrier Diode
RB751V40T1G	ONSEMI	获取价格	Schottky Barrier Diode
RB751V-40-T1-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 0.03A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC
RB751V-40TE-17	ROHM	获取价格	Schottky barrier diode