Datasheet > RB751V-40-AH

RB751V-40-AH

更新时间： 2023-12-06 20:09:57

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	155K
描述
肖特基二极管

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中文翻译

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数据手册

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RB751V-40-AH 数据手册

RB751V-40-AH

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

Features

• AEC-Q101 Qualified

DESCRIPTION

Cathode

• Small surface mounting type

• Low reverse current and low forward voltage

• High reliability

Anode

• Halogen and Antimony Free(HAF), RoHS compliant

Top View

Simplified outline SOD-323 and symbol

Applications

• High speed switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_R

Average Forward Rectifying Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Single Half Sine Wave

Superimposed on Rated Load(JEDEC methode)

200

I_FSM

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 40 to + 125

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Voltage

at I_F= 1 mA

at I_F= 1 mA , T_J= 125℃

V_F

0.37

Reverse Current

at V_R= 30 V

at V_R= 30 V , T_J= 125℃

Capacitance Between Terminals

at V_R= 1 V, f = 1 MHz

I_R

0.5

µA

27.8

C_T

1.51

1 / 3

Dated: 22/09/2023 Rev : 01

12 3

中文翻译

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