Datasheet > RB751V-40_10

RB751V-40_10

更新时间： 2024-02-18 07:07:53

品牌	Logo	应用领域
TSC		二极管
页数	文件大小	规格书
3页	137K
描述
200mW, Low VF SMD Schottky Barrier Diode

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中文翻译

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数据手册

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RB751V-40_10 数据手册

RB751V-40

200mW, Low V^FSMD Schottky Barrier Diode

Small Signal Diode

SOD-323

Features

Low power loss, high current capability, low V^F

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Min Max

0.047 0.055

Dimensions

Min

1.20

2.50

0.25

1.60

0.80

0.08

Max

Mechanical Data

Case : SOD-323 small outline plastic package

1.40

2.80 0.098 0.106

0.35 0.010 0.014

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Polarity : Indicated by cathode band

Weight :0.004 gram (approximately)

Marking Code : 5

1.80

0.90

0.15

0.063 0.071

0.031 0.035

0.003 0.006

0.19 REF

0.475 REF

Pin Configuration

Ordering Information

Marking

Package

Part No.

Packing

Suggested PAD Layout

SOD-323 RB751V-40 RR

3K / 7" Reel

0.63

0.025

SOD-323 RB751V-40 RRG 3K / 7" Reel

0.83

0.033

1.60

0.063

2.86

0.113

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

P^D

Value

200

Units

Power Dissipation

Repetitive Peak Reverse Voltage

Reverse Voltage

VRRM

V^R

Mean Forward Current @ T^L=100°C (Lead Temperature)

Non-Repetitive Peak Forward Surge Current (Note 1)

Thermal Resistance (Junction to Ambient) (Note 2)

Junction and Storage Temperature Range

I^O

IFSM

0.2

RθJA

TJ, TSTG

500

°C/W

°C

-45~125

Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)

Notes:2. Valid provided that electrodes are kept at ambient temperature

Version : B10

12 3

中文翻译

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