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RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-18 06:07:11
品牌 Logo 应用领域
RECTRON 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
3页 180K
描述
SCHOTTKY DIODES

RB751V-40 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.36Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RB751V-40 数据手册

 浏览型号RB751V-40的Datasheet PDF文件第2页浏览型号RB751V-40的Datasheet PDF文件第3页 
RB751V-40  
SCHOTTKY DIODES  
FEATURES  
High current rectifier Schottky diode  
Low voltage,low inductance  
For power supply  
*
*
*
SOD-323  
MECHANICAL DATA  
* Case: Molded plastic  
.071(1.80)  
.063(1.60)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.055(1.40)  
.047(1.20)  
* Weight: 0.004 grams  
.106(2.70)  
.098(2.50)  
MAX.039(1.00)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
.004(.10)  
.000(.00)  
REF .019(0.46)  
Dimensions in inches and (millimeters)  
RB751V-40  
MAXIMUM RATINGS (@T =25OC unless otherwise noted)  
A
SYMBOL  
UNITS  
Volts  
RATINGS  
Maximum Peak reverse voltage  
V
RM  
40  
30  
Maximum DC reverse voltage  
V
R
Volts  
Maximum Peak Forward Surge Current  
Mean rectifying current  
I
0.2  
0.03  
Amps  
Amps  
FSM  
I
O
OC  
Operating and Storage Temperature Range  
T ,T  
STG  
-40 ~ + 125  
J
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Reverse voltage leakage current  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
(V =30V)  
R
I
0.5  
uA  
R
(I =1mA)  
F
V
F
0.37  
Forward voltage  
V
pF  
Diode Capacitance  
-
(V =1V,f=1MHz)  
R
C
T
2
-
VC 2006-3  

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