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RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-19 14:53:03
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1138K
描述
SOD-323

RB751V-40 数据手册

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HANGJING ELECTRONICS TECHNOLOGY CO., LTD  
D-323 Plastic-Encapsulate Diodes  
SOD-323  
RB751V-40 Schottky Barrier Diode  
FEATURES  
Low current rectifier schottky diode  
Low voltage, low inductance  
For power supply  
z
z
z
MAKING: 5  
The marking bar indicates the cathode  
Solid dot = Green molding compound device.  
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Symbol  
VRM  
VR  
Limit  
40  
Unit  
V
30  
V
IO  
0.03  
0.2  
A
Mean rectifying current  
Non-repetitive Peak Forward  
IFSM  
PD  
A
Surge  
Current@t=8.3ms  
Power dissipation  
mW  
200  
500  
Rθ  
/W  
Thermal Resistance Junction to Ambient  
JA  
Tj  
Operating Junction Temperature Range  
Storage Temperature Range  
-40 ~ +125  
Tstg  
-55 ~ +150  
Electrical Ratings @Ta=25℃  
Parameter  
Symbol Min Typ  
Max  
Unit  
Conditions  
VF  
IR  
0.37  
0.5  
V
μA  
pF  
IF=1mA  
VR=30V  
Forward voltage  
Reverse current  
CT  
2
VR=1V, f=1MHZ  
Capacitance between terminals  
www.jscj-elec.com  
1
Rev. - 2.2  

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