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RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-18 03:02:55
品牌 Logo 应用领域
TRSYS 肖特基二极管光电二极管
页数 文件大小 规格书
1页 70K
描述
Schottky Diodes

RB751V-40 数据手册

  
RB751V-40 Schottky Diodes  
FEATURES  
z High current rectifier Schottky diode  
z Low voltage, low inductance  
z For power supply  
MAKING: 5  
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Symbol  
VRM  
VR  
Limits  
40  
Unit  
V
30  
V
Mean rectifying current  
Peak forward surge current  
Junction temperature  
Storage temperature  
IO  
0.03  
A
IFSM  
Tj  
0.2  
A
125  
Tstg  
-40~+125  
Electrical Ratings @TA=25℃  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Forward voltage  
VF  
IR  
0.37  
0.5  
V
IF=1mA  
VR=30V  
Reverse current  
µA  
pF  
Capacitance between terminals  
CT  
2
VR=1V, f=1MHZ  

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