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RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-19 14:55:19
品牌 Logo 应用领域
先科 - SWST 肖特基二极管
页数 文件大小 规格书
3页 277K
描述
肖特基二极管

RB751V-40 数据手册

 浏览型号RB751V-40的Datasheet PDF文件第2页浏览型号RB751V-40的Datasheet PDF文件第3页 
RB751V-40  
Silicon Epitaxial Planar Schottky Barrier Diode  
PINNING  
Features  
DESCRIPTION  
Cathode  
PIN  
1
• Small surface mounting type  
• Low reverse current and low forward voltage  
• High reliability  
Anode  
2
2
1
Applications  
Top View  
• High speed switching  
Simplified outline SOD-323 and symbol  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
Value  
Unit  
Peak Reverse Voltage  
VRM  
VR  
40  
V
V
Reverse Voltage  
30  
50  
Average Forward Rectifying Current  
Peak Forward Surge Current (60 Hz for 1 Cyc.)  
Junction Temperature  
IF(AV)  
IFSM  
Tj  
mA  
mA  
200  
125  
Storage Temperature Range  
Tstg  
- 40 to + 125  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
V(BR)R  
Min.  
30  
Typ.  
-
Max.  
-
Unit  
Reverse Breakdown Voltage  
V
at IR = 100 μA  
Forward Voltage  
at IF = 1 mA  
at IF = 1 mA , TJ = 125℃  
VF  
-
-
-
5
0.37  
-
V
mV  
Reverse Current  
at VR = 30 V  
at VR = 30 V , TJ = 125℃  
IR  
-
-
-
0.5  
-
µA  
pF  
27.8  
Capacitance Between Terminals  
at VR = 1 V, f = 1 MHz  
CT  
-
1.51  
-
1 / 3  
®
Dated: 12/05/2022 Rev: 03  

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