Datasheet > RB751V-40

RB751V-40

更新时间： 2023-12-06 20:10:14

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	277K
描述
肖特基二极管

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RB751V-40 数据手册

RB751V-40

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

Features

DESCRIPTION

Cathode

• Small surface mounting type

• Low reverse current and low forward voltage

• High reliability

Anode

Applications

Top View

• High speed switching

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

V_RM

V_R

Reverse Voltage

Average Forward Rectifying Current

Peak Forward Surge Current (60 Hz for 1 Cyc.)

Junction Temperature

I_F(AV)

I_FSM

T_j

℃

200

125

Storage Temperature Range

T_stg

- 40 to + 125

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Voltage

at I_F= 1 mA

at I_F= 1 mA , T_J= 125℃

V_F

0.37

Reverse Current

at V_R= 30 V

at V_R= 30 V , T_J= 125℃

I_R

0.5

µA

27.8

Capacitance Between Terminals

at V_R= 1 V, f = 1 MHz

C_T

1.51

1 / 3

Dated: 12/05/2022 Rev: 03

12 3

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