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RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-19 17:01:03
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 278K
描述
SOD-323

RB751V-40 数据手册

 浏览型号RB751V-40的Datasheet PDF文件第2页浏览型号RB751V-40的Datasheet PDF文件第3页浏览型号RB751V-40的Datasheet PDF文件第4页 
RoHS  
COMPLIANT  
RB751V-40  
Schottky Barrier Diode  
Features  
● VR 40V  
IFAV 0.03A  
Moisture Sensitivity Level 1  
Low Voltage, Low Inductance  
Mechanical Data  
ackage: SOD323  
P
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
5
Polarity:  
Marking:  
Maximum Ratings (Ta=25Unless otherwise specified)  
Conditions  
VALUE  
PARAMETER  
SYMBOL  
VRRM  
VR  
UNIT  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
40  
30  
V
IR=0.1mA  
Non-repetitive Peak forward surge current  
Average forward current  
IFSM  
IFAV  
A
0.2  
A
0.03  
200  
500  
125  
Power Dissipation  
PD  
mW  
Thermal Resisitance Junction to Ambient Air  
Maximum junctiontemperature  
Storage temperature range  
Rthja  
Tj  
/W  
Tstg  
-40 to +125  
Ordering Information (Example)  
PACKING  
MINIMUM  
INNER BOX  
OUTER CARTON  
PREFERED P/N  
UNIT WEIGHT(g)  
DELIVERY MODE  
PACKAGE(pcs) QUANTITY(pcs) QUANTITY(pcs)  
CODE  
RB751V-40  
F2  
Approximate 0.0048  
3000  
30000  
120000  
7” reel  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S1465  
Rev.1.4, 10-Jan-23  
www.21yangjie.com  

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