5秒后页面跳转
RB751V-40 PDF预览

RB751V-40

更新时间: 2024-11-17 22:17:15
品牌 Logo 应用领域
罗姆 - ROHM 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
2页 65K
描述
Schottky barrier diode

RB751V-40 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SC-90A
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.34
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-F2JESD-609代码:e1
最大非重复峰值正向电流:0.2 A元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

RB751V-40 数据手册

 浏览型号RB751V-40的Datasheet PDF文件第2页 
RB751S-40 / RB751V-40  
Diodes  
Schottky barrier diode  
RB751S-40 / RB751V-40  
!Applications  
High speed switching  
For Detection  
!External dimensions (Units : mm)  
RB751S-40  
CATHODE MARK  
!Features  
5
1) Small surface mounting type.  
(EMD2, UMD2)  
2) Low reverse current and low  
forward voltage.  
0.12±0.05  
0.3±0.05  
0.8±0.05  
0.6±0.1  
ROHM : EMD2  
EIAJ : SC-79  
JEDEC : SOD-523  
3) High reliability.  
RB751V-40  
CATHODE MARK  
CATHODE MARK  
!Construction  
Silicon epitaxial planar  
5
5
+0.1  
0.05  
+0.1  
0.3±0.05  
1.25±0.1  
0.1  
0.3±0.05  
0.1  
0.05  
1.25±0.1  
+0.2  
0.1  
+0.2  
0.7  
0.7  
0.1  
ROHM : UMD2  
EIAJ : SC-76  
JEDEC : SOD-323  
There are two different markings.  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Mean rectifying current  
Peak forward surge current  
Junction temperature  
Storage temperature  
* 60 Hz for 1  
Symbol  
Limits  
40  
Unit  
V
VRM  
V
R
30  
V
I
O
30  
mA  
mA  
˚C  
*
I
FSM  
200  
125  
Tj  
Tstg  
40~+125  
˚C  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
V
F
0.37  
0.5  
I = 1mA  
F
Reverse current  
I
R
µA  
pF  
V
R
= 30V  
Capacitance between terminals  
Note) ESD sensitive product handling required.  
CT  
2.0  
VR  
= 1V, f = 1MHz  

RB751V-40 替代型号

型号 品牌 替代类型 描述 数据表
RB751V40 NEXPERIA

功能相似

Schottky barrier diodeProduction
RB751V-40TE-17 ROHM

功能相似

Schottky barrier diode

与RB751V-40相关器件

型号 品牌 获取价格 描述 数据表
RB751V-40_09 PANJIT

获取价格

SURFACE MOUNT SCHOTTKY DIODES
RB751V-40_1 TSC

获取价格

0.03A Surface Mount Schottky Barrier Diode
RB751V-40_10 TSC

获取价格

200mW, Low VF SMD Schottky Barrier Diode
RB751V-40_12 COMCHIP

获取价格

SMD Schottky Barrier Diodes
RB751V40_15 UTC

获取价格

SCHOTTKY DIODES
RB751V-40_16 PANJIT

获取价格

SURFACE MOUNT SCHOTTKY DIODES
RB751V-40_R1_00001 PANJIT

获取价格

SURFACE MOUNT SCHOTTKY DIODES
RB751V-40_R2_00001 PANJIT

获取价格

SURFACE MOUNT SCHOTTKY DIODES
RB751V-40-AH SWST

获取价格

肖特基二极管
RB751V-40-AU PANJIT

获取价格

SURFACE MOUNT SCHOTTKY DIODES