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RB751V PDF预览

RB751V

更新时间: 2024-11-19 01:25:23
品牌 Logo 应用领域
竹懋 - CITC /
页数 文件大小 规格书
3页 160K
描述
30mA Surface Mount Small Signal Diodes

RB751V 数据手册

 浏览型号RB751V的Datasheet PDF文件第2页浏览型号RB751V的Datasheet PDF文件第3页 
RB751V  
30mA Surface Mount Small Signal Diodes  
Features  
Outline  
Low current rectification and high speed switching.  
Extremely small surface mount type.  
SOD-323  
Silicon epitaxial planar chip, metal silicon junction.  
Suffix "G" indicates Halogen-free part, ex.RB751VG.  
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
0.07 1 (1.80)  
0.06 3 (1.60)  
Marking code  
0.03 9 (1.00)Max.  
Mechanical data  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, SOD-323  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
0.106 (2.70 )  
0.098 (2.50 )  
Polarity : Indicated by cathode band  
Weight : 0.0002 ounce, 0.005 gram  
Dimensions in inches and (millimeters)  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbol  
RB751V  
JV  
Parameter  
Marking code  
UNIT  
V
VRM  
VR  
30  
Maximum Recurrent Peak Reverse Voltage  
Continuous reverse voltage  
30  
VF  
0.37  
V
mW  
OC/W  
OC  
Maximum Instantaneous Forward Voltage@1mA DC  
Power Dissipation  
PD  
150  
RθJA  
TJ  
Thermal resistance  
Operating Temperature  
Storage temperature  
junction to ambient  
520  
-40 ~ +125  
-40 ~ +125  
OC  
TSTG  
Parameter  
Conditions  
Symbol  
MIN.  
TYP.  
20  
MAX.  
30  
UNIT  
mA  
Mean rectifying current  
IO  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward surge current  
IFSM  
200  
0.5  
mA  
VR = 30V DC  
IR  
Reverse current  
uA  
pF  
VR = 10V DC, f = 1MHz  
CT  
Capacitance between terminals  
Document ID : DS-22K1A  
Issued Date : 2010/05/05  
Revised Date : 2012/05/31  
Revision : C  
1

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