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RB751SM-40T2R PDF预览

RB751SM-40T2R

更新时间: 2024-11-18 12:28:23
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
4页 453K
描述
Schottky Barrier Diode

RB751SM-40T2R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-79
包装说明:SC-79, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:12 weeks
风险等级:1.01其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

RB751SM-40T2R 数据手册

 浏览型号RB751SM-40T2R的Datasheet PDF文件第2页浏览型号RB751SM-40T2R的Datasheet PDF文件第3页浏览型号RB751SM-40T2R的Datasheet PDF文件第4页 
Data Sheet  
Schottky Barrier Diode  
RB751SM-40  
lApplications  
lDimensions (Unit : mm)  
lLand size figure (Unit : mm)  
High speed switching  
0.8±0.05  
0.12±0.05  
0.8  
lFeatures  
1)Ultra small mold type. (EMD2)  
2)High reliability  
EMD2  
lConstruction  
0.3±0.05  
Silicon epitaxial  
lStructure  
0.6±0.1  
ROHM : EMD2  
JEDEC :SOD-523  
JEITA : SC-79  
dot (year week factory)  
lTaping specifications (Unit : mm)  
lAbsolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive)  
Reverse voltage (DC)  
40  
30  
V
Average rectified forward current  
Forward current surge peak (60Hz1cyc)  
Junction temperature  
30  
Io  
IFSM  
Tj  
mA  
mA  
°C  
°C  
200  
150  
Storage temperature  
Tstg  
-40 to +150  
lElectrical characteristics (Ta=25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
0.37  
0.5  
-
Unit  
V
Conditions  
VF  
IR  
IF=1mA  
-
-
-
-
-
Reverse current  
VR=30V  
μA  
pF  
VR=1V , f=1MHz  
Capacitance between terminals  
Ct  
2
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.06 - Rev.A  
1/3  

RB751SM-40T2R 替代型号

型号 品牌 替代类型 描述 数据表
RB751S-40TE61 ROHM

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