Datasheet > RB751SL_10

RB751SL_10

更新时间： 2024-11-18 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管
页数	文件大小	规格书
4页	108K
描述
Schottky Barrier Diodes

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数据手册

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RB751SL_10 数据手册

October 2010

RB751SL

Schottky Barrier Diodes

Features

• Low Forward Voltage Drop

• Fast switching

• Very Small and Thin SMD package

• Profile height, 0.43mm max

• Footprint, 1.0 x 0.6mm

Connection Diagram

SOD-923F

Marking: AD

Absolute Maximum Ratings * T_A= 25°C unless otherwise noted

Symbol

V_RRM

I_F(AV)

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Value

Unit

I_FSM

Forward Surge Current

200

(8.3mS Single Half Sine-Wave)

P_D

Power Dissipation

227

T_J,T_STG

Operating Junction & Storage Temperature Range

-55 to +150

°C

* These ratings are limiting values above which the serviceability of the diode may be impaired.

The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Unit

R_θJA

Thermal Resistance, Junction to Ambient *

550

°C/W

* Minimum land pad.

Electrical Characteristics T_A=25°C unless otherwise noted

Symbol

Parameter

Breakdown Voltage

Forward Voltage

Reverse Leakage

Test Conditions

I_R= 10μA

Min.

Max.

Unit

V_R

V_F

I_R

I_F= 1mA

V_R= 30V

370

0.5

8.0

2.5

μA

trr

C_j

Reverse Recovery Time I_F= I_R= 10mA, irr = 0.1I_R

Junction Capacitance

V_R= 1V, f = 1.0MHz

RB751SL Rev. A1

www.fairchildsemi.com

12 3 4

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