Datasheet > Q67000-S233

Q67000-S233

更新时间： 2024-09-13 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	81K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode)

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中文翻译

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数据手册

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Q67000-S233 数据手册

BSS 125

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• V

= 1.5 ...2.5 V

GS(th)

Pin 1

Pin 2

Pin 3

Type

Package

Marking

DS(on)

Ω

BSS 125

600 V

0.1 A

TO-92

SS125

Type

Ordering Code

Q62702-S021

Q67000-S008

Q67000-S233

Tape and Reel Information

BSS 125

E6288

E6296

E6325

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

600

DGR

Ω

= 20 k

600

Gate source voltage

± 14

Gate-source peak voltage,aperiodic

Continuous drain current

T = 35 °C

0.1

0.4

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

12/05/1997

12 3 4 5 6 7

中文翻译

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