Datasheet > Q67000-S92

Q67000-S92

更新时间： 2024-09-14 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	176K
描述
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

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中文翻译

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数据手册

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Q67000-S92 数据手册

BSP 316

SIPMOS Small-Signal Transistor

• P channel

• Enhancement mode

• Logic Level

• V

= -0.8...-2.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

DS(on)

Package

Marking

Ω

BSP 316

-100 V

-0.65 A 2.2

SOT-223

BSP 316

Type

Ordering Code

Tape and Reel Information

BSP 316

Q67000-S92

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

-100

DGR

Ω

= 20 k

-100

Gate source voltage

Continuous drain current

T = 24 °C

-0.65

-2.6

1.8

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

Sep-12-1996

12 3 4 5 6 7...9

中文翻译

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