Datasheet > Q67000-S4001

Q67000-S4001

更新时间： 2024-09-14 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	132K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

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数据手册

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Q67000-S4001 数据手册

BSP 320 S

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

• V

= 2.1 ... 4.0 V

GS(th)

Pin 1

Pin 2

Pin 3

Pin 4

Type

BSP 320 S

Package

Marking

Ordering Code

V_DS

I_D

R_DS(on)

60 V

2.9 A

0.12

SOT-223

Q67000-S4001

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 25 °C

2.9

T = 100 °C

1.85

DC drain current, pulsed

Dpuls

T = 25 °C

11.6

Avalanche energy, single pulse

I = 2.9 A, V = 25 V, R = 25

L = 14.3 mH, T = 25 °C

Avalanche energy, periodic limited by T

0.18

2.9

j(max)

Avalanche current, repetitive,limited by T

Reverse diode dv/dt

j(max)

dv/dt

KV/µs

I = 2.9 A, V = 40 V, di/dt = 200 A/µs

= 150 °C

jmax

Gate source voltage

Power dissipation

tot

T = 25 °C

1.8

Semiconductor Group

29/01/1998

12 3 4 5 6 7 8

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