Datasheet > Q67000-S66

Q67000-S66

更新时间： 2024-11-04 23:30:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	125K
描述
TRANSISTOR MOSFET SMD SOT 223

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中文翻译

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数据手册

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Q67000-S66 数据手册

BSP 295

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

= 0.8...2.0V

GS(th)

Pin 1

Pin 2

Pin 3

Pin 4

Type

Package

Marking

V_DS

I_D

R_DS(on)

Ω

BSP 295

50 V

1.8 A

0.3

SOT-223

BSP 295

Type

Ordering Code

Tape and Reel Information

BSP 295

Q67000-S066

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

DGR

Ω

= 20 k

Gate source voltage

ESD Sensitivity (HBM) as per MIL-STD 883

Continuous drain current

Class 1

1.8

T = 34 ˚C

DC drain current, pulsed

Dpuls

T = 25 ˚C

7.2

Power dissipation

tot

T = 25 ˚C

1.8

Data Sheet

05.99

12 3 4 5 6 7 8

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