Datasheet > Q67000-S506

Q67000-S506

更新时间： 2024-11-08 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	133K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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中文翻译

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数据手册

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Q67000-S506 数据手册

BSS 87

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

= 0.8...2.0V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

DS(on)

Package

Marking

BSS 87

240 V

0.29 A

6 Ω

SOT-89

Type

Ordering Code

Tape and Reel Information

BSS 87

Q67000-S506

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

240

DGR

Ω

= 20 k

240

Gate source voltage

Gate-source peak voltage,aperiodic

Continuous drain current

± 20

0.29

1.16

T = 23 °C

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

Sep-18-1996

12 3 4 5 6 7 8

中文翻译

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