Datasheet > Q67000-S652

Q67000-S652

更新时间： 2024-09-14 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	175K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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中文翻译

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数据手册

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Q67000-S652 数据手册

BSP 89

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

= 0.8...2.0V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

Package

Marking

DS(on)

Ω

BSP 89

240 V

0.36 A

SOT-223

BSP 89

Type

Ordering Code

Tape and Reel Information

BSP 89

Q67000-S652

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

240

DGR

Ω

= 20 k

240

Gate source voltage

Gate-source peak voltage,aperiodic

Continuous drain current

± 20

0.36

1.44

1.7

T = 29 °C

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

Sep-12-1996

12 3 4 5 6 7...9

中文翻译

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