Datasheet > Q67000-S4010

Q67000-S4010

更新时间： 2024-11-05 04:53:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	370K
描述
SIPMOS-R Small-Signal-Transistor

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数据手册

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Q67000-S4010 数据手册

Preliminary Data

BSO 220N



SIPMOS Small-Signal-Transistor

Product Summary

Features

Drain source voltage

0.13

3.2

• Dual N Channel

Drain-Source on-state resistance

Continuous drain current

Ω

• Enhancement mode

DS(on)

• Avalanche rated

• Logic Level

• dv/dt rated

Type

Package

Ordering Code

BSO220N

SO 8

Q67000-S4010

Maximum Ratings, at T = 25 ˚C, unless otherwise specified

Parameter

Symbol

Value

Unit

3.2

Continuous drain current, one channel active

T = 25 ˚C

12.8

Pulsed drain current, one channel active

IDpulse

T = 25 ˚C

Avalanche energy, single pulse

I = 3.2 A, V = 25 V, R = 25 Ω

3.2

0.2

Avalanche current,periodic limited by T

jmax

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I = 3.2 A, V = 24 V, di/dt = 200 A/µs

Gate source voltage

tot

Power dissipation, one channel active

T = 25 ˚C

Operating temperature

-55 ... +150

55/150/56

˚C

Storage temperature

stg

IEC climatic category; DIN IEC 68-1

Data Sheet

05.99

12 3 4 5 6 7 8

中文翻译

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