Datasheet > Q67000-S249

Q67000-S249

更新时间： 2024-09-13 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	177K
描述
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Q67000-S249 数据手册

BSP 315

SIPMOS Small-Signal Transistor

• P channel

• Enhancement mode

• Logic Level

• V

= -0.8...-2.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

Package

Marking

DS(on)

Ω

BSP 315

-50 V

-1.1 A

0.8

SOT-223

BSP 315

Type

BSP 315

Ordering Code

Q67000-S75

Q67000-S249

Tape and Reel Information

E6327

E6433

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

-50

DGR

= 20 kΩ

-50

Gate source voltage

Continuous drain current

T = 39 °C

-1.1

-4.4

1.8

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

Sep-12-1996

12 3 4 5 6 7...9

中文翻译

下载PDF

与Q67000-S249相关器件

型号	品牌	获取价格	描述	数据表
Q67000-S252	INFINEON	获取价格	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Q67000-S266	INFINEON	获取价格	MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature pro
Q67000-S271	INFINEON	获取价格	MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature pro
Q67000-S273	INFINEON	获取价格	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated)
Q67000-S279	INFINEON	获取价格	IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail cu
Q67000-S28	INFINEON	获取价格	SWITCHING AMPLIFIERS FOR 4 TOUCH KEYS
Q67000-S280	INFINEON	获取价格	FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics)
Q67000-S283	INFINEON	获取价格	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Q67000-S284	INFINEON	获取价格	SIPMOS Small-Signal Transistor (N channel Enhancement mode)
Q67000-S29	INFINEON	获取价格	SWITCHING AMPLIFIERS FOR 4 TOUCH KEYS