Datasheet > Q67000-S314

Q67000-S314

更新时间： 2024-09-14 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	323K
描述
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

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数据手册

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Q67000-S314 数据手册

SIPMOS Small-Signal Transistor

BSP 129

● V_DS

● I_D

240 V

0.2 A

● R_DS(on)20 Ω

● N channel

● Depletion mode

● High dynamic resistance

● Available grouped in V_GS(th)

Type

Ordering

Code

Tape and Reel Information Pin Configuration Marking Package

BSP 129 Q67000-S073 E6327: 1000 pcs/reel

BSP 129 Q67000-S314 E7941: 1000 pcs/reel

BSP 129 SOT-223

V_GS(th)selected in groups:

(see page 212)

Maximum Ratings

Parameter

Symbol

V_DS

Values

240

± 14

± 20

0.2

Unit

Drain-source voltage

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

V_DGR

V_GS

Gate-source peak voltage, aperiodic

Continuous drain current, T_A= 34 ˚C

V_gs

I_D

Pulsed drain current,

T_A= 25 ˚C

I_{D puls}

P_tot

0.6

Max. power dissipation,

1.7

Operating and storage temperature range

T_j, T_stg

– 55 … + 150

˚C

Thermal resistance ¹⁾

chip-ambient

chip-soldering point R_thJS

R_thJA

K/W

–

DIN humidity category, DIN 40 040

–

IEC climatic category, DIN IEC 68-1

55/150/56

Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm²copper area for drain connection.

Semiconductor Group

09.96

12 3 4 5 6 7

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