Datasheet > Q67000-S279

Q67000-S279

更新时间： 2024-09-13 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管双极性晶体管
页数	文件大小	规格书
5页	171K
描述
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)

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数据手册

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Q67000-S279 数据手册

IGBT Transistor

BSP 280

Preliminary Data

● V_CE1000 V

● I _C2.5 A

● N channel

● MOS input (voltage-controlled)

● High switch speed

● Very low tail current

● Latch-up free

● Suitable freewheeling diode BAX 280

Type

Ordering Code Tape and Reel

Information

Pin Configuration Marking

Package

BSP 280 Q67000-S279

E6327: 1000 pcs/reel

BSP 280

SOT-223

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous collector current

Soldering point,

I_C

T_S= 25 ˚C

T_S= 80 ˚C

2.5

1.5

Continuous collector current ambient, T_A= 80 ˚C I_C

0.5

Pulsed collector current

Soldering point,

I_{C puls}

T_S= 80 ˚C

3.0

Collector-emitter voltage

Gate-emitter voltage

V_CE

V_GE

P_tot

1000

± 20

Power dissipation

Soldering point,

Ambient

T_S= 80 ˚C

T_A= 25 ˚C

1.8

Operating and storage temperature range

T_j, T_stg

– 40 … + 150

˚C

Thermal resistance ¹⁾

chip-ambient

chip-soldering point

R_thJA

R_thJS

K/W

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

–

40/150/56

IGBT = Insulated Gate Bipolar Transistor

Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm²copper area for drain connection.

12 3 4 5

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