Datasheet > Q67000-S229

Q67000-S229

更新时间： 2024-09-13 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	134K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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中文翻译

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数据手册

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Q67000-S229 数据手册

BSS 131

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

= 0.8...2.0V

GS(th)

Pin 1

Pin 2

Pin 3

Type

Package

Marking

DS(on)

Ω

BSS 131

240 V

0.1 A

SOT-23

SRs

Type

BSS 131

Ordering Code

Q62702-S565

Q67000-S229

Tape and Reel Information

E6327

E6433

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

240

DGR

Ω

= 20 k

240

Gate source voltage

Gate-source peak voltage,aperiodic

Continuous drain current

T = 26 °C

0.1

0.4

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

0.36

Semiconductor Group

Sep-13-1996

12 3 4 5 6 7 8

中文翻译

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