Datasheet > PSMN2R7-30PL,127

PSMN2R7-30PL,127

更新时间： 2024-09-15 14:44:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	202K
描述
PSMN2R7-30PL - N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 TO-220 3-Pin

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数据手册

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PSMN2R7-30PL,127 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TO-220	针数：	3
Reach Compliance Code：	not_compliant	风险等级：	5.74
Base Number Matches：	1

PSMN2R7-30PL,127 数据手册

PSMN2R7-30PL

N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220

Rev. 02 — 2 November 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for logic level gate drive

and conduction losses

sources

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

170

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

[2]

V_GS= 10 V; I_D= 15 A;

T_j= 25 °C; see Figure 12

2.2

2.7

mΩ

Q_GD

gate-drain charge

total gate charge

V_GS= 4.5 V; I_D= 25 A;

V_DS= 15 V; see Figure 14;

see Figure 15

Q_G(tot)

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source avalanche

energy

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 100 A; V_sup≤ 30 V;

R_GS= 50 Ω; unclamped

300 mJ

[1] Continuous current is limited by package.

[2] Measured 3 mm from package.

12 3 4 5 6 7...15

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