Datasheet > PSMN2R8-40PS

PSMN2R8-40PS

更新时间： 2024-09-16 11:13:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	745K
描述
N-channel TO220 40 V 2.8 mΩ standard level MOSFETProduction

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PSMN2R8-40PS 数据手册

PSMN2R8-40PS

N-channel TO220 40 V 2.8 mΩ standard level MOSFET

11 February 2013

Product data sheet

1. General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

High efficiency due to low switching and conduction losses

Suitable for standard level gate drive sources

•

3. Applications

DC-to-DC converters

Load switching

Motor control

•

Server power supplies

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; Fig. 1

[1]

100

211

175

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 2

junction temperature

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 10 A; T_j= 100 °C;

Fig. 12; Fig. 13

4.5

2.8

mΩ

V_GS= 10 V; I_D= 10 A; T_j= 25 °C;

Fig. 13

[2]

2.3

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 20 V;

Fig. 14; Fig. 15

Q_G(tot)

12 3 4 5 6 7...13

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