Datasheet > PSMN2R9-100SSE

PSMN2R9-100SSE

更新时间： 2024-09-16 11:14:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	332K
描述
N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88Development

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PSMN2R9-100SSE 数据手册

PSMN2R9-100SSE

N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in

LFPAK88

6 February 2023

Preliminary data sheet

1. General description

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part

of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The

PSMN2R9-100SSE delivers very low R_DSonand enhanced safe operating area performance in a

high-reliability copper-clip LFPAK88 package.

PSMN2R9-100SSE complements the latest "hot-swap" controllers - robust enough to withstand

substantial inrush currents during turn-on, low R_DSonto minimize I²R losses and deliver optimum

efficiency when turned fully ON.

2. Features and benefits

•

Fully optimized Safe Operating Area (SOA) for superior linear mode operation

Low R_DSonfor low I²R conduction losses

LFPAK88 package for applications that demand the highest performance and reliability

3. Applications

•

Hot swap

Load switch

Soft start

E-fuse

Telecommunication systems based on a 48 V backplane/supply rail

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

210

341

175

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

2.3

3.4

2.9

4.6

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

Fig. 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

T_j= 25 °C; Fig. 14; Fig. 15

6.4

21.3

125

Q_G(tot)

188

12 3 4 5 6 7...13

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