Datasheet > PSMN2R8-80SSF

PSMN2R8-80SSF

更新时间： 2024-09-16 11:09:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	246K
描述
NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in LFPAK88 packageDevelopment

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PSMN2R8-80SSF 数据手册

PSMN2R8-80SSF

NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in

LFPAK88 package

23 June 2022

Objective data sheet

1. General description

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for

industrial and consumer applications.

2. Features and benefits

•

Low Q_RRfor higher efficiency and lower spiking

•

190 Amp I_D(max)continuous current rating

Low Q_G× R_DSonFOM for high efficiency switching applications

Strong avalanche energy rating (E_as)

Avalanche rated and 100% tested

Ha-free and RoHS compliant LFPAK88 package

3. Applications

•

Synchronous rectifier in AC-to-DC and DC-to-DC

Primary side switch in DC-to-DC

BLDC motor control

Full-bridge and half-bridge applications

Battery protection

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C

190

341

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

V_GS= 7 V; I_D= 25 A; T_j= 25 °C

2.2

2.7

2.8

4.2

mΩ

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 40 V; V_GS= 10 V;

Fig. 4

[tbd]

19.6

103

[tbd]

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 67 A; V_sup≤ 80 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 147 µs

[1]

513

source avalanche

energy

12 3 4 5 6 7...9

中文翻译

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